PART |
Description |
Maker |
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW40N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
ADE7757A |
Single Phase Energy Metering IC with Integrated Oscillator and Reverse Power Indication
|
Analog Devices
|
ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ... Reverse Path Amplifiers Reverse Amplifier with Step Attenuator
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
TISP6NTP2A TISP6NTP2A08 |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
Bourns Electronic Solutions
|